unisonic technologies co., ltd mp2510 preliminary pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r214-021.a pnp transistor ? description the utc mp2510 is a pnp transistor, it uses utc?s advanced technology to provide the customers with high dc current gain and high collector-emitter breakdown voltage, etc. the utc mp2510 is suitable for automobile power amplifiers, etc. ? features * high dc current gain (min = 40@v ce = 4v, i c = 12a) * high collector-emitter breakdown voltage (min = -100v) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 mp2510l-x-t3p-t mp2510g-x-t3p-t to-3p b c e tube pin assignment: b: base c: collector e: emitter
mp2510 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r214-021.a ? absolute maximum ratings (t a =25 c) parameter symbol ratings unit collector-base voltage v cbo -100 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -6 v collector current i c -25 a base current i b -5 a collector power dissipation (t c =25 c) pc 125 w junction temperature t j 150 c storage temperature t stg -55~150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =100v -10 a emitter cut-off current i ebo v eb =6v -10 a collector-emitter voltage v ( br ) ceo i c =50ma -100 v dc current gain (note 1) h fe v ce =4v, i c =12a 40 120 collector-emitter satu ration voltage v ce ( sat ) i c =12a, i b =1.2a -1.5 v base- emitter satu ration voltage v be ( on ) v ce =4v, i c =12a -1.8 v cut-off frequency f t v ce =12v, i e =-1a 20 mhz output capacitance c ob v cb =10v, i e =0a, f=1mhz 200 pf ? classification of h fe rank r o h fe1 40~80 60~120
mp2510 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r214-021.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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